Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

53A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

3.8W Ta 107W Tc

Turn Off Delay Time  

52 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2004

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Voltage - Rated DC  

55V

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

260

Current Rating  

53A

Time@Peak Reflow Temperature-Max (s)  

30

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

120W

Case Connection  

DRAIN

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

16.5m Ω @ 28A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1696pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

72nC @ 10V

Rise Time  

76ns

Vgs (Max)  

±20V

Fall Time (Typ)  

57 ns

Continuous Drain Current (ID)  

53A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0165Ohm

Drain to Source Breakdown Voltage  

55V

Pulsed Drain Current-Max (IDM)  

180A

Avalanche Energy Rating (Eas)  

152 mJ

Height  

9.65mm

Length  

10.668mm

Width  

4.826mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free